By Chuan Seng Tan, Kuan-Neng Chen, Visit Amazon's Steven J. Koester Page, search results, Learn about Author Central, Steven J. Koester,
Three-dimensional (3D) integration is pointed out as a potential road for non-stop functionality progress in built-in circuits (IC) because the traditional scaling process is confronted with extraordinary demanding situations in basic and financial limits. Wafer point 3D IC can take numerous varieties, and so they frequently contain a stack of a number of thinned IC layers which are vertically bonded and interconnected through via silicon through TSV.
There is a protracted string of advantages that it is easy to derive from 3D IC implementation corresponding to shape issue, density multiplication, more suitable hold up and gear, stronger bandwidth, and heterogeneous integration. This ebook provides contributions by way of key researchers during this box, protecting motivations, know-how systems, functions, and different layout matters.
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Extra resources for 3D Integration for VLSI Systems
2006) Die stacking microarchitecture, in Proceedings of the 39th Annual IEEE/ACM International Symposium on Microarchitecture, Association for Computing Machinery, New York, pp. 469-479. U. -J. -H. Ahn, H. -H. Cha, J. Ahn, D. H. Jim, J. W. Lee, et al. (2009) 8Gb 3D DDR3 DRAM using through-silicon-via technology , in IEEE International Solid-State Circuits Conference: Digest of Technical Papers, 2009, pp. 130-131, 131a. , et al. (2009) A 4-side tileable back illuminated 3D-integrated MPixel CMOS image sensor, in IEEE International Solid-State Circuits Conference: Digest of Technical Papers, 2009, pp.
Through Silicon Via (TSV) Etching is a key process fabrication module employed in 3D IC technologies. Chapter 4 reviews the work already performed in TSV etching by the Compound Semiconductor industry, then examines deep reactive ion etching (DRIE) processes as developed for MEMS device fabrication. Following this review, the chapter presents an analysis of the specific requirements of TSV etching for silicon device 3D technology, and then concludes with a look forward to TSV etching requirements visible on the near-term horizon.
9. Burns, J. , Chen, C. , Knect, J. , and Wyatt, P. W. (2006) A wafer- scale 3-D circuit integration technology, IEEE Trans. Electron Devices, 53(10), 25072516. Guarini, K. , Topol, A. , Newport, M. , Frank, D. , Singh, D. , Cohen, G. , Nitta, S. , et al. 13μm SOI CMOS devices and circuits transferred for three-dimensional integrated circuit fabrication, in Technical Digest of the International Electron Devices Meeting, pp. 943-945. , Nelson, D. , et al. (2006) Die stacking microarchitecture, in Proceedings of the 39th Annual IEEE/ACM International Symposium on Microarchitecture, Association for Computing Machinery, New York, pp.
3D Integration for VLSI Systems by Chuan Seng Tan, Kuan-Neng Chen, Visit Amazon's Steven J. Koester Page, search results, Learn about Author Central, Steven J. Koester,