By B. Jayant Baliga
Advanced strength Rectifier options offers an in-depth remedy of the physics of operation of complex strength rectifiers. Analytical versions for explaining the operation of all of the complex strength rectifier units are constructed. result of numerical simulations are supplied for added perception into machine physics and for validation of assorted analytical models.
Drawing upon years of functional adventure and utilizing a variety of examples and illustrative designs, B. Jayant Baliga discusses:
Analytical formulations for layout and research of constructions reminiscent of the Junction Barrier managed Schottky (JBS) Rectifier and the Merged PiN Schottky (MPS) Rectifier
Numerical simulations to provide an explanation for the working physics and validate the models
The function of silicon carbide within the structural layout and improvement of energy rectifiers
Advanced energy Rectifier strategies should be of curiosity to training engineers within the strength semiconductor neighborhood and will additionally function a reference for graduate scholars and school doing examine in an educational atmosphere. chosen sections of the ebook can be utilized as supplementary educating fabric for classes taught utilizing the textbook 'Fundamentals of strength Semiconductor units' by means of the author.
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Additional resources for ADVANCED POWER RECTIFIER CONCEPTS
The thermionic field emission model for the tunneling current leads to a barrier lowering effect proportional to the square of the electric field at the metal-semiconductor interface. When combined with the thermionic emission model, the leakage current density can be written as: ⎛ qφ ⎞ ⎛ qΔφ BN ⎞ J S = AT 2 exp⎜ − BN ⎟. exp⎜ ⎟. 19] where CT is a tunneling coefficient. A tunneling coefficient of 8 x 10-13 cm2/V2 was found to yield an increase in leakage current by six orders of magnitude as shown in Fig.
4E On-State Characteristics for 50V Silicon JBS Rectifiers. 0 Forward Bias (V) Fig. 5E On-State Characteristics for 50V Silicon JBS Rectifiers. Junction Barrier Controlled Schottky Rectifiers 45 In the JBS rectifier, an increase in the junction depth improves the shielding of the Schottky contact. However, it also increases the resistance of the current path from the Schottky contact to the cathode. 5 microns to retain the same Schottky contact size. 5 micron junction depth in Fig. 5E. The i-v characteristics of the structures coincide because they have the same Schottky contact size and their cell resistances are almost equal.
9] In addition, it is important to include the resistance associated with the thick, highly doped N+ substrate because this is comparable to that for the drift region in some instances. The specific resistance of the N+ substrate can be determined by taking the product of its resistivity and thickness. For silicon, N+ substrates with resistivity of 1 mΩ-cm are available. The specific resistance contributed by the N+ substrate with a typical thickness of 200 microns is 2 x 10-5 Ω-cm2. 45 volts from the built-in potential of the P-N junction.
ADVANCED POWER RECTIFIER CONCEPTS by B. Jayant Baliga